Gas mixture of Ar and O2 is fed into coaxial structure, and plasma is generated forming thin plasma needle at the tip of central conductor. Generated plasma is applied to IC package surface, and molding compound is decomposed to CO2 and H2O etc.
Laser system was used to reduce the amount of molding compound, and then O2 plasma was supplied to the surface of the sample.
No wire thinning is observed
Samples decapped by MP101 were tested for characteristic change using an oscilloscope. Result show, there was no characteristic change before and after decap process.
8 pin DIP Au bonding wired sample CMOS Crystal Oscillator Check (16MHz)
No characteristic change was confirmed
16 pin DIPAu bonding wired sampleS-R latch circuits check
No characteristic change was confirmed